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CSD17484F4_15 Datasheet, PDF (3/15 Pages) Texas Instruments – CSD17484F4 30 V N-Channel FemtoFET MOSFET
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5 Specifications
5.1 Electrical Characteristics
(TA = 25°C unless otherwise stated)
PARAMETER
STATIC CHARACTERISTICS
BVDSS
IDSS
IGSS
VGS(th)
Drain-to-Source Voltage
Drain-to-Source Leakage Current
Gate-to-Source Leakage Current
Gate-to-Source Threshold Voltage
RDS(on) Drain-to-Source On-Resistance
gƒs
Transconductance
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Series Gate Resistance
Qg
Gate Charge Total (4.5 V)
Qg
Gate Charge Total (8.0 V)
Qgd
Gate Charge Gate-to-Drain
Qgs
Gate Charge Gate-to-Source
Qg(th)
Gate Charge at Vth
Qoss
Output Charge
td(on)
Turn On Delay Time
tr
Rise Time
td(off)
Turn Off Delay Time
tƒ
Fall Time
DIODE CHARACTERISTICS
VSD
Diode Forward Voltage
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
TEST CONDITIONS
VGS = 0 V, IDS = 250 μA
VGS = 0 V, VDS = 24 V
VDS = 0 V, VGS = 12 V
VDS = VGS, IDS = 250 μA
VGS = 1.8 V, IDS = 0.5 A
VGS = 2.5 V, IDS = 0.5 A
VGS = 4.5 V, IDS = 0.5 A
VGS = 8 V, IDS = 0.5 A
VDS = 15 V, IDS = 0.5 A
VGS = 0 V, VDS = 15 V,
ƒ = 1 MHz
VDS = 15 V, IDS = 0.5 A
VDS = 15 V, VGS = 0 V
VDS = 15 V, VGS = 4.5 V,
IDS = 0.5 A, RG = 2 Ω
ISD = 0.5 A, VGS = 0 V
VDS= 15 V, IF = 0.5 A, di/dt = 300 A/μs
5.2 Thermal Information
(TA = 25°C unless otherwise stated)
THERMAL METRIC
RθJA
Junction-to-Ambient Thermal Resistance(1)
Junction-to-Ambient Thermal Resistance(2)
(1) Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu.
(2) Device mounted on FR4 material with minimum Cu mounting area.
CSD17484F4
SLPS550 – MAY 2015
MIN TYP MAX UNIT
30
V
100 nA
50 nA
0.65 0.85 1.10 V
170
270 mΩ
125
160 mΩ
107
128 mΩ
99
121 mΩ
4
S
150
195 pF
44
57 pF
2.2
2.9 pF
8
Ω
920 1200 pC
1570 2040 pC
75
pC
280
pC
140
pC
1400
pC
3
ns
1
ns
11
ns
4
ns
0.73
1300
6.2
0.9 V
pC
ns
TYPICAL VALUES
85
245
UNIT
°C/W
Copyright © 2015, Texas Instruments Incorporated
Product Folder Links: CSD17484F4
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