CSD17484F4_15 Datasheet, PDF (1/15 Pages) Texas Instruments – CSD17484F4 30 V N-Channel FemtoFET MOSFET

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CSD17484F4 30 V N-Channel FemtoFET™ MOSFET
CSD17484F4
SLPS550 – MAY 2015
1 Features
•1 Low On-Resistance
• Ultra-Low Q_g and Q_gd
• Low Threshold Voltage
• Ultra-Small Footprint (0402 Case Size)
– 1.0 mm × 0.6 mm
• Ultra-Low Profile
– 0.2 mm Height
• Integrated ESD Protection Diode
– Rated >4 kV HBM
– Rated >2 kV CDM
• Lead and Halogen Free
• RoHS Compliant
2 Applications
• Optimized for Load Switch Applications
• Optimized for General Purpose Switching
Applications
• Battery Applications
• Handheld and Mobile Applications
3 Description
This 99 mΩ, 30 V N-Channel FemtoFET™ MOSFET
is designed and optimized to minimize the footprint in
many handheld and mobile applications. This
technology is capable of replacing standard small
signal MOSFETs while providing at least a 60%
reduction in footprint size.
.
Typical Part Dimensions
0.20 ^mm
Product Summary
T_A = 25°C
V_DS
Drain-to-Source Voltage
Q_g
Gate Charge Total (4.5 V)
Q_gd
Gate Charge Gate-to-Drain
R_DS(on) Drain-to-Source On-Resistance
V_GS(th) Threshold Voltage
TYPICAL VALUE
30
920
75
V_GS = 1.8 V 170
V_GS = 2.5 V 125
V_GS = 4.5 V 107
V_GS = 8.0 V
99
0.85
UNIT
V
pC
pC
mΩ
mΩ
mΩ
mΩ
V
Device
CSD17484F4
CSD17484F4T
.
Ordering Information⁽¹⁾
Qty Media
Package
3000
250
7-Inch
Reel
7-Inch
Reel
Femto(0402)
1.0 mm × 0.6 mm
Land Grid Array (LGA)
Ship
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
T_A = 25°C
V_DS Drain-to-Source Voltage
V_GS Gate-to-Source Voltage
I_D
Continuous Drain Current⁽¹⁾
I_DM
Pulsed Drain Current⁽¹⁾⁽²⁾
Continuous Gate Clamp Current
I_G
Pulsed Gate Clamp Current⁽²⁾
VALUE
30
12
3.0
18
35
350
UNIT
V
V
A
A
mA
P_D
ESD
Rating
Power Dissipation
Human Body Model (HBM)
Charged Device Model (CDM)
500
mW
4
kV
2
kV
T_J,
Operating Junction and
T_stg Storage Temperature Range
–55 to 150 °C
E_AS
Avalanche Energy, single pulse I_D = 7.1 A,
L = 0.1 mH, R_G = 25 Ω
2.5
mJ
(1) Typical R_θJA = 85°C/W on 1 inch² (6.45 cm²), 2 oz.
(0.071 mm thick) Cu pad on a 0.06 inch (1.52 mm) thick FR4
PCB.
(2) Pulse duration ≤100 μs, duty cycle ≤1%
Top View
0.60 _mm
1.00 ^mm
D
.
.
G
S
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.