BQ24313 Datasheet, PDF (3/22 Pages) Texas Instruments – OVERVOLTAGE AND OVERCURRENT PROTECTION IC AND Li+ CHARGER FRONT-END PROTECTION IC

bq24313
bq24315
www.ti.com............................................................................................................................................... SLUS817A – MARCH 2008 – REVISED NOVEMBER 2008
ELECTRICAL CHARACTERISTICS
over junction temperature range –40°C to 125°C and recommended supply voltage (unless otherwise noted)
IN
UVLO
V_hys(UVLO)
t_DGL(PGOOD)
PARAMETER
Undervoltage lock-out, input power
detected threshold
Hysteresis on UVLO
Deglitch time, input power detected
status
I_DD
Operating current
I_STDBY
Standby current
INPUT TO OUTPUT CHARACTERISTICS
V_DO
Drop-out voltage IN to OUT
OUPUT VOLTAGE REGULATION
V_O(REG)
Output voltage
INPUT OVERVOLTAGE PROTECTION
V_OVP
t_PD(OVP)
V_hys(OVP)
Input overvoltage protection threshold
Input OV propagation delay⁽¹⁾
Hysteresis on OVP
t_ON(OVP)
Recovery time from input overvoltage
condition
INPUT OVERCURRENT PROTECTION
I_OCP
Input overcurrent protection threshold
range
I_OCP
K_(ILIM)
Input overcurrent protection threshold
Adjustable current limit factor
TEST CONDITIONS
CE = Low, V_IN increasing from 0V to 3V
CE = Low, V_IN decreasing from 3V to 0V
CE = Low. Time measured from V_IN 0V → 5V 1µs
rise-time, to output turning ON
CE = Low, No load on OUT pin,
V_IN = 5V, R_(ILIM) = 25kΩ
CE = High, V_IN = 5V
CE = Low, V_IN = 5V, I_OUT = 1A
CE = Low, V_IN = 6.5V, I_OUT = bq24313
1A
CE = Low, V_IN = 5.7V, I_OUT = bq24315
1A
CE = Low, V_IN increasing
from 5V to 11V
bq24313
bq24315
CE = Low
CE = Low, V_IN decreasing
from 11V to 5V
bq24313
bq24315
CE = Low, Time measured from
V_IN 7.5V → 5V, 1µs fall-time
CE = Low, R_(ILIM) = 24.9kΩ,
3 V ≤ V_IN < V_OVP – V_hys(OVP)
MIN TYP
2.6 2.7
200 260
8
400
65
170
5.67 5.85
5.3 5.5
10.2 10.5
5.71 5.85
200
60 120
20
60
8
300
900 1000
25
t_BLANK(OCP)
Blanking time, input overcurrent
detected
t_REC(OCP)
Recovery time from input overcurrent
condition
BATTERY OVERVOLTAGE PROTECTION
BV_OVP
Battery overvoltage protection
threshold
V_hys(Bovp)
I_(VBAT)
t_DGL(Bovp)
Hysteresis on BV_OVP
Input bias current on VBAT pin
Deglitch time, battery overvoltage
detected
THERMAL PROTECTION
T_J(OFF)
Thermal shutdown temperature
T_J(OFF-HYS) Thermal shutdown hysteresis
LOGIC LEVELS ON CE
V_IL
Low-level input voltage
V_IH
High-level input voltage
I_IL
Low-level input current
CE = Low, V_IN > 4.4V
CE = Low, V_IN > 4.4V
V_(VBAT) = 4.4V, T_J = 25°C
CE = Low, V_IN > 4.4V. Time measured from V_(VBAT)
rising from 4.1V to 4.4V to FAULT going low.
V_(/CE) = 0V
4.30
200
0
1.4
176
64
4.35
275
176
140
20
MAX UNIT
2.8 V
300 mV
ms
600 µA
95 µA
280 mV
6.03 V
5.7
10.8
V
6.00
ns
180
mV
110
ms
1500 mA
1100 mA
A＝
kΩ
µs
ms
4.4 V
320 mV
10 nA
µs
150 °C
°C
0.4 V
V
1 µA
(1) Not tested in production. Specified by design.
Copyright © 2008, Texas Instruments Incorporated
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