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| BQ24300 Datasheet, PDF (3/22 Pages) Texas Instruments – OVERVOLTAGE AND OVERCURRENT PROTECTION IC AND Li+ CHARGER FRONT-END PROTECTION IC | |||
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www.ti.com
bq24300
bq24304
SLUS764A â AUGUST 2007 â REVISED OCTOBER 2007
ELECTRICAL CHARACTERISTICS
over junction temperature range 0°C ⤠TJ ⤠125°C and recommended supply voltage (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP
POWER-ON-RESET
VUVLO
Under-voltage lock-out, input CE = Low, VIN increasing from 0V to 3V
power detected threshold
2.5 2.7
VHYS-UVLO
TDGL(PGOOD)
IN
Hysteresis on UVLO
Deglitch time, input power
detected status
CE = Low, VIN decreasing from 3V to 0V
CE = Low, time measured from
VIN 0V â 4V 1μs rise time, to output turning ON
200 260
8
IDD
Operating
current
bq24300
bq24304
VIN = 5V, CE = Low, no load on OUT pin
340
410
ISTDBY
Standby current
CE = High, VIN = 5V
65
INPUT TO OUTPUT CHARACTERISTICS
VDO
Drop-out voltage IN to OUT CE = Low, VIN = 4 V, IOUT = 250 mA
45
OUTPUT VOLTAGE REGULATION
VO(REG)
bq24300
Output voltage
bq24304
CE = Low, VIN = 6 V, IOUT = 250 mA
5.30 5.5
4.36 4.5
INPUT OVERVOLTAGE PROTECTION
VOVP
Input overvoltage protection CE = Low, VIN increasing from 4V to 12V
threshold
10.2 10.5
VHYS-OVP
tBLANK(OVP)
Hysteresis on OVP
Blanking time, on OVP
tON(OVP)
Recovery time from input
overvoltage condition
INPUT OVERCURRENT PROTECTION
CE = Low, VIN decreasing from 12V to 4V
CE = Low, Time measured from
VIN 4V â 12V, 1μs rise time, to output turning OFF
CE = Low, Time measured from
VIN 12V â 4V, 1μs fall time, to output turning ON
60 110
64
8
IOCP
Input overcurrent protection
range
CE = Low, VIN = 5 V
250 300
tBLANK(OCP)
Blanking time, input
overcurrent detected
CE = Low
5
tREC(OCP)
Recovery time from input
overcurrent condition
CE = Low
64
BATTERY OVERVOLTAGE PROTECTION
BVOVP
Battery overvoltage protection CE = Low, VIN > 4.3V, VVBAT increasing
threshold
from 4.2 V to 4.5 V
4.30 4.35
VHYS-BOVP
Hysteresis on BVOVP
CE = Low, VIN > 4.3V, VVBAT decreasing
from 4.5 V to 3.9 V
200 275
IVBAT
Input bias current on VBAT
pin
VVBAT = 4.4 V, TJ = 25°C
TDGL(BOVP)
Deglitch time, battery
overvoltage detected
CE = Low, VIN > 4.4V, time measured from
VVBAT 4.2V â 4.5V, 1μs rise time to output turning OFF
176
P-FET GATE DRIVER
VGCLMP
Gate driver clamp voltage
THERMAL PROTECTION
VIN > 15V
13
14
TJ(OFF)
Thermal shutdown
temperature
140
TJ(OFF-HYS)
Thermal shutdown hysteresis
20
LOGIC LEVELS ON CE
VIL
Low-level input voltage
0
VIH
High-level input voltage
1.4
IIL
Low-level input current
IIH
High-level input current
VCE = 1.8V
MAX UNIT
2.8 V
300 mV
ms
400
μA
500
95 μA
75 mV
5.70
V
4.64
10.8 V
160 mV
μs
ms
350 mA
ms
ms
4.40 V
320 mV
10 nA
μs
15 V
150 °C
°C
0.4 V
V
1 μA
15 μA
Copyright © 2007, Texas Instruments Incorporated
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