TPIC3302 Datasheet, PDF (2/11 Pages) Texas Instruments – 3-CHANNEL COMMON-DRAIN POWER DMOS ARRAY

TPIC3302
3-CHANNEL COMMON-DRAIN POWER DMOS ARRAY
SLIS021B – APRIL 1994 – REVISED JULY 1995
electrical characteristics, T_C = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
V(BR)DSX
VGS(th)
V(BR)
Drain-to-source breakdown voltage
Gate-to-source threshold voltage
Reverse drain-to-GND breakdown voltage
(across D1)
ID = 250 µA,
ID = 1 mA,
VGS = 0
VDS = VGS
60
1.5 1.85 2.2
Drain-to-GND current = 250 µA
100
VDS(on) Drain-to-source on-state voltage
ID = 1 A,
VGS = 10 V,
See Notes 2 and 3
0.4 0.475
VF
Forward on-state voltage, GND-to-drain
ID = 1 A,
See Notes 2 and 3
2
VF(SD)
Forward on-state voltage, source-to-drain
IS = 1 A,
VGS = 0,
See Notes 2 and 3
0.9 1.1
IDSS
IGSSF
IGSSR
Ilkg
rDS(on)
Zero-gate-voltage drain current
Forward gate current, drain short circuited to source
Reverse gate current, drain short circuited to source
Leakage current, drain-to-GND
Static drain-to-source on-state resistance
VDS = 48 V,
VGS = 0
VGS = 16 V,
VSG = 16 V,
VR = 48 V
VGS = 10 V,
ID = 1 A,
See Notes 2 and 3
and Figures 6 and 7
TC = 25°C
TC = 125°C
VDS = 0
VDS = 0
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
0.05
1
0.5
10
10 100
10 100
0.05
1
0.5
10
0.4 0.475
0.63 0.7
gfs
Forward transconductance
VDS = 10 V,
ID = 0.5 A,
See Notes 2 and 3
0.85 1.02
Ciss
Coss
Crss
Short-circuit input capacitance, common source
Short-circuit output capacitance, common source
Short-circuit reverse-transfer capacitance,
common source
VDS = 25 V,
f = 1 MHz
VGS = 0,
115 145
60
75
30
40
NOTES: 2. Technique should limit TJ – TC to 10°C maximum, pulse duration ≤ 5 ms.
3. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.
UNIT
V
V
V
V
V
V
µA
nA
nA
µA
Ω
S
pF
source-to-drain diode characteristics, T_C = 25°C
PARAMETER
TEST CONDITIONS
trr(SD) Reverse-recovery time
QRR Total diode charge
IS = 0.5 A, VGS = 0, VDS = 48 V,
di/dt = 100 A/µs,
See Figure 1
MIN TYP MAX UNIT
35
ns
0.03
µC
GND-to-drain diode characteristics, T_C = 25°C (see schematic, D1)
PARAMETER
TEST CONDITIONS
trr
QRR
Reverse-recovery time
Total diode charge
IF = 0.5 A,
di/dt = 100 A/µs,
VDS = 48 V,
See Figure 1
MIN TYP MAX UNIT
90
ns
0.2
µC
2–2
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