TPIC3302 Datasheet, PDF (1/11 Pages) Texas Instruments – 3-CHANNEL COMMON-DRAIN POWER DMOS ARRAY

TPIC3302
3-CHANNEL COMMON-DRAIN POWER DMOS ARRAY
• Low r_DS(on) . . . 0.4 Ω Typ
• High-Voltage Outputs . . . 60 V
• Pulsed Current . . . 5 A Per Channel
• Fast Commutation Speed
description
SLIS021B – APRIL 1994 – REVISED JULY 1995
D PACKAGE
(TOP VIEW)
SOURCE1 1
GATE2 2
SOURCE2 3
SOURCE3 4
8 GATE1
7 GND
6 DRAIN
5 GATE3
The TPIC3302 is a monolithic power DMOS array that consists of three electrically isolated N-channel
enhancement-mode DMOS transistors configured with a common drain and open sources. The TPIC3302 is
offered in a standard eight-pin small-outline surface-mount (D) package.
The TPIC3302 is characterized for operation over the case temperature range of – 40°C to 125°C.
schematic
DRAIN
6
Q1
8
GATE1
Q2
Z1
2
GATE2
Q3
Z2
5
GATE3
D1
Z3
1
SOURCE1
3
SOURCE2
4
SOURCE3
7
GND
absolute maximum ratings over operating case temperature range (unless otherwise noted)^†
Drain-to-source voltage, V_DS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Source-to-GND voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V
Drain-to-GND voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V
Gate-to-source voltage, V_GS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 20 V
Continuous drain current, each output, all outputs on, T_C = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A
Continuous source-to-drain diode current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A
Pulsed drain current, each output, T_C = 25°C (see Note 1 and Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 A
Single-pulse avalanche energy, T_C = 25°C, E_AS (see Figure 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 mJ
Continuous total power dissipation at (or below) T_C = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.95 W
Operating virtual junction temperature range, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 40°C to 150°C
Operating case temperature range, T_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 40°C to 125°C
Storage temperature range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
† _{Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and}
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: Pulse duration = 10 ms, duty cycle = 2%
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
• POST OFFICE BOX 655303 DALLAS, TEXAS 75265
Copyright © 1995, Texas Instruments Incorporated
2–1