TMS465169P Datasheet, PDF (2/30 Pages) Texas Instruments – DYNAMIC RANDOM-ACCESS MEMORIES

TMS465169, TMS465169P
4194304 BY 16-BIT EXTENDED DATA OUT
DYNAMIC RANDOM-ACCESS MEMORIES
SMHS566B – JUNE 1997 – REVISED APRIL 1998
description (continued)
These devices feature maximum RAS access times of 50 and 60 ns. All addresses and data-in lines are latched
on-chip to simplify system design. Data out is unlatched to allow greater system flexibility.
The TMS465169 / P is offered in a 50-lead plastic surface-mount TSOP (DGE suffix). This package is designed
for operation from 0°C to 70°C.
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