TMS465169P Datasheet, PDF (16/30 Pages) Texas Instruments – DYNAMIC RANDOM-ACCESS MEMORIES

TMS465169, TMS465169P
4194304 BY 16-BIT EXTENDED DATA OUT
DYNAMIC RANDOM-ACCESS MEMORIES
SMHS566B – JUNE 1997 – REVISED APRIL 1998
PARAMETER MEASUREMENT INFORMATION
RAS
xCAS
tT
tRCD
tASR
tRAH
tRAD
tRWC
tRAS
tCAS
tASC
tCAH
tRP
tCRP
tCP
tT
Address
W
DQ0 – DQ15
OE
Row
tRCS
Column
tRWD
Don’t Care
tCWL
tAWD
tCWD
tCAC
tAA
tDS
tCLZ
Hi-Z _{See Note A}
Data
Out
Data
In
tRAC
tOEA
tOED
tOEZ
Don’t Care
tRWL
tWP
Don’t Care
tDH
Don’t Care
tOEH
Don’t Care
NOTE A: Data out can go from the high-impedance state to an invalid-data state prior to the specified access time.
Figure 5. Read-Write-Cycle Timing
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