THS9000_15 Datasheet, PDF (2/24 Pages) Texas Instruments – 50 MHz to 750 MHz CASCADEABLE AMPLIFIER

THS9000
SLOS425E – DECEMBER 2003 – REVISED DECEMBER 2013
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
PACKAGED DEVICE⁽¹⁾
THS9000DRWT
THS9000DRWR
AVAILABLE OPTIONS
PACKAGE TYPE
TRANSPORT MEDIA, QUANTITY
2 × 2 QFN⁽²⁾
Tape and Reel, 250
Tape and Reel, 3000
(1) For the most current package and ordering information, see the Package Option Addendum at the end
of this document, or see the TI Web site at www.ti.com.
(2) The PowerPAD™ is electrically isolated from all other pins.
ABSOLUTE MAXIMUM RATINGS
Over operating free-air temperature (unless otherwise noted)⁽¹⁾
Supply voltage, GND to V_S
Input voltage
Continuous power dissipation
Maximum junction temperature, T_J
Maximum junction temperature, continuous operation, long term reliability,
T_J ⁽²⁾
Storage temperature, T_stg
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
HBM
ESD Ratings:
CDM
MM
THS9000
5.5
GND to V_S
See Dissipation Rating table
+150
+125
–65 to +150
+300
2000
1500
100
UNIT
V
°C
°C
°C
°C
V
V
V
(1) The absolute maximum ratings under any condition is limited by the constraints of the silicon process. Stresses above these ratings may
cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied.
(2) The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may
result in reduced reliability and/or lifetime of the device.
DISSIPATION RATING TABLE
PACKAGE
DRW ^{(2) (3)}
θ_JA
(°C/W)
91
T_A ≤ +25°C
1.1 W
POWER RATING⁽¹⁾
T_A = +85°C
440 mW
(1) Power rating is determined with a junction temperature of +125°C. Thermal management of the final PCB should strive to keep the
junction temperature at or below +125°C for best performance.
(2) This data was taken using the JEDEC standard High-K test PCB.
(3) The THS9000 incorporates a PowerPAD on the underside of the chip. This acts as a heatsink and must be connected to a thermally
dissipating plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction temperature, which could
permanently damage the device. See TI Technical Brief SLMA002 for more information about utilizing the PowerPAD thermally-
enhanced package.
RECOMMENDED OPERATING CONDITIONS
Supply voltage
Operating free-air temperature, T_A
Supply current
MIN NOM MAX UNIT
2.7
5V
–40
+85 °C
100
mA
2
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