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THS4509 Datasheet, PDF (2/30 Pages) Texas Instruments – WIDEBAND, LOW NOISE, LOW DISTORTION FULLY DIFFERENTIAL AMPLIFIER
THS4509
SLOS454 – JANUARY 2005
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated
circuits be handled with appropriate precautions. Failure to observe proper handling and installation
procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision
integrated circuits may be more susceptible to damage because very small parametric changes could
cause the device not to meet its published specifications.
PACKAGING/ORDERING INFORMATION
TEMPERATURE
–40°C to 85°C
PACKAGED DEVICES
QUAD QFN(1)(2)
(RGT-16)
THS4509RGTT
THS4509RGTR
SYMBOL
–
(1) This package is available taped and reeled. The R suffix standard quantity is 3000. The T suffix standard quantity is 250.
(2) The exposed thermal pad is electrically isolated from all other pins.
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range (unless otherwise noted)
VS– to VS+
VI
VID
IO
TJ
TA
Tstg
Supply voltage
Input voltage
Differential input voltage
Output current(1)
Continuous power dissipation
Maximum junction temperature
Operating free-air temperature range
Storage temperature range
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
HBM
ESD ratings
CDM
MM
UNIT
6V
±VS
4V
200 mA
See Dissipation Rating Table
150°C
–40°C to 85°C
–65°C to 150°C
300°C
2000
1500
100
(1) The THS4509 incorporates a (QFN) exposed thermal pad on the underside of the chip. This acts as a heatsink and must be connected
to a thermally dissipative plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction temperature
which could permanently damage the device. See TI technical brief SLMA002 and SLMA004 for more information about utilizing the
QFN thermally enhanced package.
DISSIPATION RATINGS TABLE PER PACKAGE
PACKAGE
RGT (16)
θJC
2.4°C/W
θJA
39.5°C/W
POWER RATING
TA≤ 25°C
2.3 W
TA = 85°C
225 mW
2