TC254P Datasheet, PDF (2/16 Pages) Texas Instruments – 336- × 244-pixel ccd image sensor

TC254P
336- × 244-PIXEL CCD IMAGE SENSOR
SOCS060B – JUNE 1997 – REVISED JULY 1998
description (continued)
Charge is converted to signal voltage with a 12-µV per electron conversion factor by a high-performance
charge-detection structure with built-in automatic reset and a voltage reference generator. The signal is buffered
by a low-noise two-stage source-follower amplifier to provide high output-drive capability.
The TC254P is built using TI-proprietary virtual-phase technology, which provides devices with high blue
response, low dark current, high photoresponse uniformity, and single-phase clocking. The TC254P is
characterized for operation from –10°C to 45°C.
functional block diagram
1
IAG2
2
ADB
Image Area With
Blooming Protection
Dark Reference Elements
Clear Line
8
ABG
7
IAG1
4
OUT
3
SUB
2 Dummy
Elements
Storage Area
Amplifier
Serial Register
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ
Clearing Drain
6 _SAG
5
SRG
2
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