TC253SPD-30 Datasheet, PDF (2/21 Pages) Texas Instruments – 680 x 500 PIXEL IMPACTRON CCD IMAGE SENSOR

TC253SPDĆ30
680 × 500 PIXEL IMPACTRON CCD IMAGE SENSOR
JULY 2003 − SOCS085
description (continued)
The image-sensing area of the TC253SPD-30 is configured into 500 lines with 680 pixels in each line.
Twenty-four pixels are reserved in each line for dark reference. The blooming protection is based on an
advanced lateral overflow drain concept that does not reduce NIR response. The sensor can be operated in
the interlaced or progressive scan modes and can capture a full 340,000 pixels in one image field. The frame
transfer from the image sensing area to the memory area is accomplished at a very high rate that minimizes
image smear. The electronic exposure control is achieved by clearing unwanted charge from the image area
using a short positive pulse applied to the antiblooming drain. This marks the beginning of the integration time,
which can be arbitrarily shortened from its nominal length. After the charge is integrated and stored in memory,
it becomes available for readout in the next cycle. This is accomplished using a unique serial register design
that includes special charge multiplication pixels.
The TC253SPD-30 sensor is built using TI-proprietary advanced split-gate virtual-phase CCD (SGVPCCD)
technology, which provides devices with wide spectral response, high quantum efficiency (QE), low dark
current, and high response uniformity. The TC253SPD-30 sensors are characterized for operation from –10°C
to 45°C.
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