TC253SPD-30 Datasheet, PDF (1/21 Pages) Texas Instruments – 680 x 500 PIXEL IMPACTRON CCD IMAGE SENSOR

TC253SPDĆ30
680 × 500 PIXEL IMPACTRON CCD IMAGE SENSOR
D Very Low Noise, High Sensitivity
Electronically Variable
D High Resolution, 1/3-in Format, Solid State
Charge-Coupled Device (CCD) Frame
Transfer Image Sensor for Black and White,
NTSC, and Computer Applications
D 340,000 Pixels per Field
D Frame Memory
D 656 (H) × 496 (V) Active Pixels in Image
Sensing Area Compatible With Electronic
Centering
D Multimode Readout Capability
− Progressive Scan
− Interlace Scan
− Line Summing
D Fast Single-Pulse Clear Capability
D Continuous Electronic Exposure Control
from 1/30 s to 1/5,000 s
D 7.4- µm Square Pixels
D Advanced Lateral Overflow Drain Low Dark
Current
D High Photoresponse Uniformity Over a
Wide Spectral Range
D Solid-State Reliability With No Image
Burn-In, Residual Imaging, Image
Distortion, Image Lag, or Microphonics
ODB 1
IAG2 2
SAG2 3
SRG1 4
SRG2 5
CMG 6
JULY 2003 − SOCS085
DUAL-IN-LINE PACKAGE
(TOP VIEW)
12 IAG1
11 SAG1
10 SUB
9 ADB
8 NC
7 V_OUT
description
The TC253SPD-30 is a frame-transfer, CCD image sensor designed for use in black and white, NTSC TV,
computer, and special-purpose applications requiring high sensitivity, low noise, and small size.
The TC253SPD-30 is a new device of the IMPACTRON family of very-low noise, high sensitivity image
sensors that multiply charge directly in the charge domain before conversion to voltage. The charge carrier
multiplication (CCM) is achieved by using a low-noise, single-carrier, impact ionization process that occurs
during repeated carrier transfers through high-field regions. Applying multiplication pulses to specially designed
gates activates the CCM. The amount of multiplication is adjustable according to the amplitude of multiplication
pulses. The device function resembles the function of image intensifiers implemented in solid state.
This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic fields. These
circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 kV according to MIL-STD-883C,
Method 3015; however, it is advised that precautions be taken to avoid application of any voltage higher than maximum-rated
voltages to these high-impedance circuits. During storage or handling, the device leads should be shorted together or the device
should be placed in conductive foam. In a circuit, unused inputs should always be connected to an appropriate logic-voltage level,
preferably either VCC or ground. Specific guidelines for handling devices of this type are contained in the publication Guidelines for
Handling Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
IMPACTRON is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright  2003, Texas Instruments Incorporated
• POST OFFICE BOX 655303 DALLAS, TEXAS 75265
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