OPA2348-DIE Datasheet, PDF (2/5 Pages) Texas Instruments – CMOS Rail-to-Rail Operational Amplifier

OPA2348-DIE
SBOS715 – MAY 2014
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
4 Bare Die Information
DIE THICKNESS
10 mils.
BACKSIDE FINISH
Silicon with backgrind
BACKSIDE
POTENTIAL
Floating
BOND PAD
METALLIZATION COMPOSITION
Al-Si-Cu (0.5%)
BOND PAD
THICKNESS
800 nm
DESCRIPTION
V+
OUT A
-In A
+In A
OUT B
-In B
+In B
V-
Bond Pad Coordinates in Microns
PAD NUMBER
X MIN
Y MIN
1
965.6
5
2
839.4
5
3
713.2
5
4
587
5
5
383.6
5
6
257.4
5
7
131.2
5
8
5
5
X MAX
1041.8
915.6
789.4
663.2
459.8
333.6
207.4
81.2
Y MAX
81.2
81.2
81.2
81.2
81.2
81.2
81.2
81.2
2
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