BQ500110_11 Datasheet, PDF (2/25 Pages) Texas Instruments – Qi Compliant Wireless Power Transmitter Manager

bq500110
SLUSAE0A – NOVEMBER 2010 – REVISED APRIL 2011
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
over operating free-air temperature range (unless otherwise noted)
VALUE
MIN
MAX
UNIT
Voltage applied at V33D to DGND
–0.3
3.8
V
Voltage applied at V33A to AGND
Voltage applied to any pin ⁽²⁾
–0.3
3.8
V
–0.3
3.8
V
Storage temperature,T_STG
–40
150
°C
(1) Stresses beyond those listed under absolute maximum ratingsmay cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditionsis not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages referenced to GND.
RECOMMENDED OPERATING CONDITIONS
over operating free-air temperature range (unless otherwise noted)
V Supply voltage during operation, V33D, V33A
T_A Operating free-air temperature range ⁽¹⁾
T_J Junction temperature ⁽¹⁾
MIN NOM MAX
3.0 3.3 3.6
–40
125
125
UNIT
V
°C
°C
(1) When operating continuously, the bq500110's typical power consumption causes a 15°C temperature rise from ambient.
2
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