TMS370CX5X Datasheet, PDF (14/77 Pages) Texas Instruments – 8-BIT MICROCONTROLLER

TMS370Cx5x
8-BIT MICROCONTROLLER
SPNS010F – DECEMBER 1986 – REVISED FEBRUARY 1997
data EEPROM (continued)
Writing to the data EEPROM module is controlled by the data EEPROM control register (DEECTL) and the
write-protection register (WPR). Programming algorithm examples are available in the TMS370 Family User’s
Guide (literature number SPNU127) or the TMS370 Family Data Manual (literature number SPNS014B). The
data EEPROM features include the following:
D Programming:
– Bit, byte, and block write/erase modes
– Internal charge pump circuitry. No external EEPROM programming voltage supply is needed.
– Control register: Data EEPROM programming is controlled by the data EEPROM control register
(DEECTL) located in the PF frame beginning at location P01A.
– In-circuit programming capability: There is no need to remove the device to program it.
D Write-protection: Writes to the data EEPROM are disabled during the following conditions:
– Reset: All programming of the data EEPROM module is halted.
– Write protection active: There is one write-protect bit per 32-byte EEPROM block.
– Low-power mode operation
D Write protection can be overridden by applying 12 V to MC.
Table 8 shows the memory map of the control registers.
Table 8. Data EEPROM and Program EPROM Control Registers Memory Map
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ _ADDRESS
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ _P014
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ _{P015–P016}
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ _P017
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ P018
P019
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ _P01A
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ _P01B
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ _P01C
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ _P01D
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ _P01E
SYMBOL
EPCTLH
INT1
INT2
INT3
DEECTL
EPCTLM
EPCTLL
NAME
Program EPROM control register – high array
Reserved
External interrupt 1 control register
External interrupt 2 control register
External interrupt 3 control register
Data EEPROM control register
Reserved
Program EPROM control register – middle array
Reserved
Program EPROM control register – low array
For the 16K-byte EPROM device, program memory is controlled by P01C; for the 32K-byte EPROM device,
the program memory is controlled by P01C and P01E; for the 48K-byte EPROM device, the program memory
is controlled by P014, P01C, and P01E.
program EPROM
The ‘370C756 consists of a 16K-byte array of EPROM at address locations 4000h through 7FFFh. The
‘370C758 consists of 32K bytes made up of two 16K-byte arrays of EPROM; the first 16K-bytes array is located
at address locations 2000h through 5FFFh, and the second 16K byte array is located at address locations 6000h
through 9FFFh. The ’370C759 consists of 48K bytes that is made up of three 16K byte arrays of EPROM; the
first 16K bytes array is located at address locations 2000h through 5FFFh, the second 16K-byte array is located
at address locations 6000h through 9FFFh, the third 16K-byte array is located at address locations A000h
through DFFFh (see Figure 3).
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