BQ4285E Datasheet, PDF (14/32 Pages) Texas Instruments – Enhanced RTC With NVRAM Control

bq4285E/L
DC Electrical Characteristics—bq4285E (TA = TOPR, VCC = 5V ± 10%)
Symbol
Parameter
ILI
Input leakage current
ILO
Output leakage current
VOH
VOL
ICC
VSO
ICCB
Output high voltage
Output low voltage
Operating supply current
Supply switch-over voltage
Battery operation current
ICCSB
VPFD
VOUT1
VOUT2
Standby supply current
Power-fail-detect voltage
VOUT voltage
V_OUT voltage
Minimum Typical Maximum Unit
Conditions/Notes
-
-
±1
µA VIN = VSS to VCC
AD0–AD7, INT, and SQW
-
-
±1
µA in high impedance,
VOUT = VSS to VCC
2.4
-
-
V IOH = -2.0 mA
-
-
0.4
V IOL = 4.0 mA
-
7
15
mA
Min. cycle, duty = 100%,
IOH = 0mA, IOL = 0mA
-
V_BC
-
V
-
0.3
0.5
µA
V_BC = 3V, TA = 25°C, no
load on VOUT or CEOUT
VIN = VCC or VSS,
-
300
-
µA CS ≥ V_CC - 0.2,
no load on VOUT
4.0
4.17
4.35
V
VCC - 0.3V
-
-
V IOUT = 100mA, VCC >VBC
VBC - 0.3V
IOUT = 100µA, VCC < VBC
ICE
Note:
Chip enable input current
-
-
100
Typical values indicate operation at TA = 25°C, VCC = 5V or VBC = 3V.
µA Internal 50K pull-up
14