BQ4285E Datasheet, PDF (13/32 Pages) Texas Instruments – Enhanced RTC With NVRAM Control

bq4285E/L
Recommended DC Operating Conditions—bq4285E (TA = TOPR)
Symbol
Parameter
Minimum
VCC
Supply voltage
4.5
VIL
Input low voltage
-0.3
VIH
Input high voltage
2.2
VBC
Backup cell voltage
2.5
Notes:
Typical values indicate operation at TA = 25°C.
Potentials are relative to VSS.
Typical
Maximum
Unit
5.0
5.5
V
-
0.8
V
-
VCC + 0.3
V
-
4.0
V
Recommended DC Operating Conditions—bq4285L (TA = TOPR)
Symbol
Parameter
Minimum
VCC
Supply voltage
2.7
VIL
Input low voltage
-0.3
VIH
Input high voltage
2.2
VBC
Backup cell voltage
2.4
Notes:
Typical values indicate operation at TA = 25°C.
Potentials are relative to VSS.
Typical
Maximum
Unit
3.15
3.6
V
-
0.6
V
-
VCC + 0.3
V
-
4.0
V
Crystal Specifications—bq4285E/L (DT-26 or Equivalent)
Symbol
fO
CL
TP
k
Q
R1
C0
C0/C1
DL
∆f/fO
Parameter
Oscillation frequency
Load capacitance
Temperature turnover point
Parabolic curvature constant
Quality factor
Series resistance
Shunt capacitance
Capacitance ratio
Drive level
Aging (first year at 25°C)
Minimum
-
-
20
-
40,000
-
-
-
-
-
Typical
32.768
6
25
-
70,000
-
1.1
430
-
1
Maximum
-
-
30
-0.042
-
45
1.8
600
1
-
Unit
kHz
pF
°C
ppm/°C
KΩ
pF
µW
ppm
13