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TAS5176 Datasheet, PDF (10/25 Pages) Texas Instruments – 6-Channel, 100-W, Digital-Amplifier Power Stage
TAS5176
SLES196 – JUNE 2007
www.ti.com
ELECTRICAL CHARACTERISTICS
FPWM = 384 kHz, PVDD = 31V, GVDD = 12 V, VDD = 12 V, TC (case temperature) = 25°C, unless otherwise noted. All
performance is in accordance with recommended operating conditions, unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
INTERNAL VOLTAGE REGULATOR AND CURRENT CONSUMPTION
VREG
Voltage regulator, only used as reference node
VDD = 12 V
IVDD
VDD supply current
Operating, 50% duty cycle
Idle, reset mode
IGVDD_X
Gate supply current per half-bridge
50% duty cycle
Idle, reset mode
IPVDD_X
Half-bridge idle current
50% duty cycle, without output filter or load, 5.1
mode
50% duty cycle, without output filter or load, 2.1
mode
OUTPUT STAGE MOSFETs
RDS(on), LS Sat Drain-to-source resistance, low side, satellite
RDS(on), HS Sat Drain-to-source resistance, high side, satellite
RDS(on), LS Sub Drain-to-source resistance, low side, subwoofer
RDS(on), HS Sub Drain-to-source resistance, high side, subwoofer
I/O PROTECTION
TJ = 25°C, includes metallization resistance
TJ = 25°C, includes metallization resistance
TJ = 25°C, includes metallization resistance
TJ = 25°C, includes metallization resistance
VUVP, G
VUVP, hyst (1)
OTW (1)
Undervoltage protection limit GVDD_X
Undervoltage protection hysteresis
Overtemperature warning
OTWhyst (1)
Temperature drop needed below OTW temp. for
OTW to be inactive after the OTW event
OTE (1)
Overtemperature error
OTEHYST (1)
Temperature drop needed below OTE temp. for SD
to be released after the OTE event
OLCP
Overload protection counter
Overcurrent limit protection, sat.
IOC
Overcurrent limit protection, sub.
Resistor programmable, high end,
Rocp = 18 kΩ
Resistor programmable, high end,
Rocp = 18 kΩ
IOCT
Rocp
Overcurrent response time
OC programming resistor range
Resistor tolerance = 5%
STATIC DIGITAL SPECIFICATION
VIH
High-level input voltage
VIL
Low-level input voltage
Ilkg
Input leakage current
OTW/SHUTDOWN (SD)
PWM_X, M1, M2, M3, RESET
Static condition
RINT_PU
Internal pullup resistor to DREG (3.3 V) for SD and
OTW
VOH
High-level output voltage
Internal pullup resistor only
External pullup: 4.7-kΩ resistor to 5 V
VOL
FANOUT
Low-level output voltage
Device fanout OTW, SD
IO = 4 mA
No external pullup
MIN TYP MAX UNIT
3 3.3 3.6
V
7 20
mA
6 16
5 22
mA
1
3
180
mA
100
210
mΩ
210
mΩ
110
mΩ
110
mΩ
10
V
250
mV
125
°C
25
°C
155
°C
25
°C
1.25
ms
4.5
A
8
A
210
ns
27
kΩ
2
V
0.8
–80
80
μA
26
kΩ
3 3.3 3.6
4.5
5
V
0.2 0.4
30
Devices
(1) Specified by design.
10
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