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| DRV8801A-Q1_15 Datasheet, PDF (10/24 Pages) Texas Instruments – DRV8801A-Q1 DMOS Full-Bridge Motor Drivers | |||
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DRV8801A-Q1
SLVSC79A â JUNE 2014 â REVISED SEPTEMBER 2014
VM
www.ti.com
4
1
xOUTA
3
2
xOUTB
1 Drive
2 Fast decay with synchronous rectification
3 Low-side slow decay with synchronous rectification
4 High-side slow decay with synchronous rectification
xISEN
R(SENSE)
Figure 4. H-Bridge Operation Modes
7.3.5 Charge Pump
The charge pump is used to generate a supply above VBB to drive the source-side DMOS gates. A 0.1-μF
ceramic monolithic capacitor should be connected between CP1 and CP2 for pumping purposes. A 0.1-μF
ceramic monolithic capacitor should be connected between VCP and VBB to act as a reservoir to run the high-
side DMOS devices.
7.3.6 SENSE
A low-value resistor can be placed between the SENSE pin and ground for current-sensing purposes. To
minimize ground-trace IR drops in sensing the output current level, the current-sensing resistor should have an
independent ground return to the star ground point. This trace should be as short as possible. For low-value
sense resistors, the IR drops in the PCB can be significant, and should be taken into account.
To set a manual overcurrent trip threshold, place a resistor between the SENSE pin and GND. When the SENSE
pin rises above 500 mV, the H-bridge output is disabled (hi-Z). The device automatically retries with a period of
t(OCP).
The overcurrent trip threshold can be calculated using Equation 1.
I(trip) = 500 mV/R
(1)
The overcurrent trip level selected cannot be greater than I(OCP).
10
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