TS3USB221E Datasheet, PDF (1/20 Pages) Texas Instruments – HIGH-SPEED USB 2.0 (480-Mbps) 1:2 MULTIPLEXER/DEMULTIPLEXER SWITCH WITH SINGLE ENABLE AND IEC LEVEL 3 ESD PROTECTION

TS3USB221E
www.ti.com......................................................................................................................................................................................... SCDS263 – SEPTEMBER 2009
HIGH-SPEED USB 2.0 (480-Mbps) 1:2 MULTIPLEXER/DEMULTIPLEXER SWITCH
WITH SINGLE ENABLE AND IEC LEVEL 3 ESD PROTECTION
FEATURES
1
• V_CC Operation of 2.5 V to 3.3 V
• Switch I/Os Accept Signals Up to 5.5 V
• 1.8-V Compatible Control-Pin Inputs
• Low-Power Mode When OE Is Disabled (1 µA)
• r_ON = 6 Ω Maximum
• r_ON = 0.2 Ω Typical
• C_io(on) = 7 pF Maximum
• Low Power Consumption (30 µA Maximum)
• ESD Performance Tested Per JESD 22
– 7000-V Human-Body Model
(A114-B, Class II)
– 1000-V Charged-Device Model (C101)
• ESD Performance I/O Port to GND
– 12-kV Human Body Model (A114-B, Class II)
– ±7-kV Contact Discharge (IEC 61000-4-2)
• High Bandwidth (1 GHz Typical)
APPLICATIONS
• Routes Signals for USB 1.0, 1.1, and 2.0
DESCRIPTION/
ORDERING INFORMATION
The TS3USB221E is a high-bandwidth switch
specially designed for the switching of high-speed
USB 2.0 signals in handset and consumer
applications, such as cell phones, digital cameras,
and notebooks with hubs or controllers with limited
USB I/Os. The wide bandwidth (1 GHz) of this switch
allows signals to pass with minimum edge and phase
distortion. The device multiplexes differential outputs
from a USB host device to one of two corresponding
outputs. The switch is bidirectional and offers little or
no attenuation of the high-speed signals at the
outputs. It is designed for low bit-to-bit skew and high
channel-to-channel noise isolation, and is compatible
with various standards, such as high-speed USB 2.0
(480 Mbps).
The TS3USB221E integrates ESD protection cells on
all pins, is available in a SON package (3 mm ×
3 mm) as well as in a tiny µQFN package (2 mm ×
1.5 mm) and is characterized over the free air
temperature range from –40°C to 85°C.
DRC PACKAGE
(TOP VIEW)
1D+
1D–
2D+
2D–
GND
1
2
3
4
5
10 V_CC
W_{9 S}
IE _{8 D+}
EV ⁷ D–
PR ^{6 OE}
RSE PACKAGE
(TOP VIEW)
V_CC
1D+ ¹
10
9_S
1D– ²
8 _D+
2D+ ³
7 _D–
2D– ⁴
5
GND
6 _OE
RSE PACKAGE
(BOTTOM VIEW)
V_CC
S
9
10
1 _1D+
D+ ⁸
2 _1D–
D– ⁷
3 _2D+
OE ⁶
5
4 _2D–
GND
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
UNLESS OTHERWISE NOTED this document contains
PRODUCTION DATA information current as of publication date.
Products conform to specifications per the terms of Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009, Texas Instruments Incorporated