TMS626812B Datasheet, PDF (1/40 Pages) Texas Instruments – 1,048,576 BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES

TMS626812B
1 048 576 BY 8-BIT BY 2-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS693A – OCTOBER 1997 – REVISED APRIL 1998
D Organization
1048576 by 8 Bits by 2 Banks
D 3.3-V Power Supply (± 10% Tolerance)
D Two Banks for On-Chip Interleaving
(Gapless Accesses)
D High Bandwidth – Up to 125-MHz Data
Rates
D CAS Latency (CL) Programmable to
2 or 3 Cycles From Column-Address Entry
D Burst Sequence Programmable to Serial or
Interleave
D Burst Length Programmable to 1, 2, 4, or 8
D Chip Select and Clock Enable for Enhanced
System Interfacing
D Cycle-by-Cycle DQ Bus Mask Capability
D Auto-Refresh and Self-Refresh Capabilities
D 4K Refresh (Total for Both Banks)
D High-Speed, Low-Noise, Low-Voltage TTL
(LVTTL) Interface
D Power-Down Mode
D Compatible With JEDEC Standards
D Pipeline Architecture
D Temperature Ranges
Operating, 0°C to 70°C
Storage, – 55°C to 150°C
D Intel PC100 Compliant (-8A, -8, and
-10 Devices)
D Performance Ranges:
’626812B-8
’626812B-8A
’626812B-10
SYNCHRONOUS
CLOCK
CYCLE TIME
tCK3
tCK2
(CL† = 3) (CL = 2)
8 ns
10 ns
8 ns
15 ns
10 ns
15 ns
ACCESS TIME
(CLOCK TO
OUTPUT)
tAC3
tAC2
(CL = 3) (CL = 2)
6 ns
6 ns
7.5 ns
6 ns
7 ns
7.5 ns
REFRESH
TIME
INTERVAL
64 ms
64 ms
64 ms
† _{CL = CAS latency}
TMS626812B
DGE PACKAGE
( TOP VIEW )
V_CC 1
DQ0 2
V_SSQ 3
DQ1 4
V_CCQ 5
DQ2 6
V_SSQ 7
DQ3 8
V_CCQ 9
NC 10
NC 11
W 12
CAS 13
RAS 14
CS 15
A11 16
A10 17
A0 18
A1 19
A2 20
A3 21
V_CC 22
44 V_SS
43 DQ7
42 V_SSQ
41 DQ6
40 V_CCQ
39 DQ5
38 V_SSQ
37 DQ4
36 V_CCQ
35 NC
34 NC
33 DQM
32 CLK
31 CKE
30 NC
29 A9
28 A8
27 A7
26 A6
25 A5
24 A4
23 V_SS
PIN NOMENCLATURE
A0 – A10 Address Inputs
A0 – A10 Row Addresses
A0 – A8 Column Addresses (for TMS626812B)
A10 Automatic-Precharge Select
A11
Bank Select
CAS Column-Address Strobe
CKE Clock Enable
CLK System Clock
CS
Chip Select
DQ[0 :7] SDRAM Data Input / Output (TMS626812B)
DQM Data-Input / Data-Output Mask Enable
NC
No External Connect
RAS Row-Address Strobe
VCC
VCCQ
Power Supply (3.3-V Typical)
Power Supply for Output Drivers
(3.3-V Typical)
VSS
VSSQ
W
Ground
Ground for Output Drivers
Write Enable
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Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright © 1998, Texas Instruments Incorporated
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