TMS44409 Datasheet, PDF (1/26 Pages) Texas Instruments – 1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY

TMS44409, TMS44409P
1048576-WORD BY 4-BIT
DYNAMIC RANDOM-ACCESS MEMORY
SMHS563 – JULY1995
D Organization . . . 1 048576 × 4
D Single 5-V Power Supply (±10% Tolerance)
DJ PACKAGE
( TOP VIEW )
DGA PACKAGE
( TOP VIEW )
D Performance Ranges:
ACCESS
TIME
(tRAC)
(MAX)
’44409 / P-60 60 ns
’44409 / P-70 70 ns
ACCESS
TIME
(tCAC)
(MAX)
15 ns
18 ns
ACCESS
TIME
(tAA)
(MAX)
30 ns
35 ns
EDO
CYCLE
(tHPC)
(MIN)
25 ns
30 ns
DQ1 1
DQ2 2
W3
RAS 4
A9 5
26 V_SS
25 DQ4
24 DQ3
23 CAS
22 OE
DQ1 1
DQ2 2
W3
RAS 4
A9 5
26 V_SS
25 DQ4
24 DQ3
23 CAS
22 OE
’44409 / P-80 80 ns
20 ns
40 ns
35 ns
D Extended Data Out ( EDO) Operation
D CAS-Before-RAS ( CBR) Refresh
A0 9
18 A8
A0 9
18 A8
D 3-State Unlatched Output
D Low Power Dissipation
D All Inputs / Outputs and Clocks are
TTL-Compatible
A1 10
A2 11
A3 12
V_CC 13
17 A7
16 A6
15 A5
14 A4
A1 10
A2 11
A3 12
V_CC 13
17 A7
16 A6
15 A5
14 A4
D Long Refresh Period
– 1 024 Cycle Refresh in 16 ns (max)
– 128 ms on Low Power, Self-Refresh
Version (TMS44409P Only)
D Operating Free-Air Temperature Range
0°C to 70°C
PIN NOMENCLATURE
A0 – A9
CAS
DQ1 – DQ4
Address Inputs
Column-Address Strobe
Data In / Data Out
description
OE
RAS
Output Enable
Row-Address Strobe
The TMS44409 is a high-speed 4 194 304-bit
dynamic random-access memory (DRAM) orga-
nized as 1 048 576 words of four bits each. This
VCC
VSS
W
5-V Supply
Ground
Write Enable
device features maximum RAS access times of
60 ns, 70 ns and 80 ns. Maximum power
consumption is as low as 385 mW operating and
6 mW standby. All inputs and outputs, including
clocks, are compatible with Series 74 TTL. All addresses and data-in lines are latched on chip to simplify system
design. Data out is unlatched to allow greater system flexibility.
The TMS44409P is a high-speed, low-power, self-refresh version of the TMS44409 DRAM.
All versions of the TMS44409 / P are offered in a 300-mil 20 / 26 J-lead plastic surface-mount SOJ package ( DJ
suffix) and a 20 / 26-lead plastic small outline package ( DGA suffix). These devices are characterized for
operation from 0°C to 70°C.
ADVANCE INFORMATION concerns new products in the sampling or
preproduction phase of development. Characteristic data and other
specifications are subject to change without notice.
Copyright © 1995, Texas Instruments Incorporated
• POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443
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