TMS418160A Datasheet, PDF (1/24 Pages) Texas Instruments – 1048576 BY 16-BIT DYNAMIC RANDOM-ACCESS MEMORY

This data sheet is applicable to TMS418160As
symbolized by Revision “E” and subsequent
revisions as described in the device
symbolization section.
D Organization . . . 1 048576 by 16 Bits
D Single 5-V Power Supply (± 10% Tolerance)
D 1 024-Cycle Refresh in 16 ms
D Performance Ranges:
ACCESS ACCESS ACCESS
TIME TIME TIME
tRAC tCAC tAA
MAX MAX MAX
READ/
WRITE
CYCLE
MIN
’418160A-50 50 ns 13 ns 25 ns
90 ns
’418160A-60 60 ns 15 ns 30 ns
110 ns
’418160A-70 70 ns 18 ns 35 ns
130 ns
D Enhanced Page-Mode Operation With
xCAS-Before-RAS ( xCBR) Refresh
D 3-State Unlatched Output
D Low Power Dissipation
D High-Reliability Plastic 42-Lead
400-Mil-Wide Surface-Mount Small-Outline
J-Lead (SOJ) Package (DZ Suffix)
D Ambient Temperature Range
0°C to 70°C
description
The TMS418160A is a 16 777 216-bit dynamic
random-access memory (DRAM) device orga-
nized as 1 048 576 words of 16 bits. It employs
state-of-the-art technology for high performance,
reliability, and low power at low cost.
This device features maximum RAS access times
of 50-, 60-, and 70 ns. All address and data-in lines
are latched on chip to simplify system design.
Data out is unlatched to allow greater system
flexibility.
The TMS418160A is offered in a 42-lead plastic
surface-mount SOJ package (DZ suffix). This
package is designed for operation from 0° to 70°C.
TMS418160A
1048576 BY 16-BIT
DYNAMIC RANDOM-ACCESS MEMORY
SMKS891C – AUGUST 1996 – REVISED OCTOBER 1997
DZ PACKAGE
( TOP VIEW )
V_DD 1
DQ0 2
DQ1 3
DQ2 4
DQ3 5
V_DD 6
DQ4 7
DQ5 8
DQ6 9
DQ7 10
NC 11
NC 12
W 13
RAS 14
NC 15
NC 16
A0 17
A1 18
A2 19
A3 20
V_DD 21
42 V_SS
41 DQ15
40 DQ14
39 DQ13
38 DQ12
37 V_SS
36 DQ11
35 DQ10
34 DQ9
33 DQ8
32 NC
31 LCAS
30 UCAS
29 OE
28 A9
27 A8
26 A7
25 A6
24 A5
23 A4
22 V_SS
A[0 :9]
DQ[0:15]
LCAS
UCAS
NC
OE
RAS
VDD
VSS
W
PIN NOMENCLATURE
Address Inputs
Data In / Data Out
Lower Column-Address Strobe
Upper Column-Address Strobe
No Internal Connection
Output Enable
Row-Address Strobe
5-V Supply
Ground
Write Enable
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright © 1997, Texas Instruments Incorporated
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