TMS416400 Datasheet, PDF (1/30 Pages) Texas Instruments – 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS

TMS416400, TMS416400P, TMS417400, TMS417400P
TMS426400, TMS426400P, TMS427400, TMS427400P
4194304-WORD BY 4-BIT HIGH-SPEED DRAMS
SMKS881B – MAY 1995 – REVISED AUGUST 1995
Electrical characteristics for TMS416400/P and
TMS417400/P is Production Data. Electrical
characteristics for TMS426400/P and
TMS427400/P is Product Preview only.
D Organization . . . 4 194304 × 4
D Single 5 V Power Supply for TMS41x400 / P
(±10% Tolerance)
D Single 3.3 V Power Supply for
TMS42x400/ P (± 0.3 V Tolerance)
D Performance Ranges:
ACCESS ACCESS ACCESS READ OR
TIME TIME TIME WRITE
tRAC
MAX
tCAC
MAX
tAA CYCLE
MAX MIN
’4xx400/P-60 60 ns 15 ns 30 ns 110 ns
’4xx400/P-70 70 ns 18 ns 35 ns 130 ns
’4xx400/P-80 80 ns 20 ns 40 ns 150 ns
D Enhanced Page-Mode Operation With
CAS-Before-RAS ( CBR) Refresh
D Long Refresh Period and Self-Refresh
Option ( TMS4xx400P)
D 3-State Unlatched Output
D Low Power Dissipation
D High-Reliability Plastic 24 / 26-Lead
300-Mil-Wide Surface-Mount Small-Outline
J-Lead (SOJ) Package and 24 / 26-Lead
Surface-Mount Thin Small-Outline Package
( TSOP)
D Operating Free-Air Temperature Range:
0°C to 70°C
D EPIC™ (Enhanced Performance Implanted
CMOS) Technology
DJ PACKAGE
( TOP VIEW )
DGA PACKAGE
( TOP VIEW )
V_CC 1
DQ1 2
DQ2 3
W4
RAS 5
A11^† 6
26 V_SS V_CC 1
25 DQ4 DQ1 2
24 DQ3 DQ2 3
23 CAS
W4
22 OE RAS 5
21 A9 A11^† 6
26 V_SS
25 DQ4
24 DQ3
23 CAS
22 OE
21 A9
A10 8
A0 9
A1 10
A2 11
A3 12
V_CC 13
19 A8
A10 8
18 A7
A0 9
17 A6
A1 10
16 A5
A2 11
15 A4
A3 12
14 V_SS V_CC 13
19 A8
18 A7
17 A6
16 A5
15 A4
14 V_SS
PIN NOMENCLATURE
A0 – A11†
CAS
DQ1 – DQ4
OE
NC
RAS
VCC
VSS
W
Address Inputs
Column-Address Strobe
Data In / Data Out
Output Enable
No Internal Connection
Row-Address Strobe
5-V or 3.3-V Supply‡
Ground
Write Enable
† _{A11 is NC for TMS4x7400 / P.}
‡ _{See Available Options Table}
description
The TMS4xx400 is a set of high-speed,
16 777 216-bit dynamic random-access memories
organized as 4 194 304 words of 4 bits each. The
TMS4xx400P series are high-speed, low-power,
self-refresh, 16 777 216-bit dynamic random-
access memories organized as 4 194 304 words of
4 bits each. The TMS4xx400 and TMS4xx400P
employ state-of-the-art EPIC™ (Enhanced
Performance Implanted CMOS) technology for
high performance, reliability, and low power.
AVAILABLE OPTIONS
DEVICE
POWER
SUPPLY
SELF
REFRESH
BATTERY
BACKUP
REFRESH
CYCLES
TMS416400
TMS416400P
TMS417400
TMS417400P
TMS426400
TMS426400P
TMS427400
TMS427400P
5V
5V
5V
5V
3.3 V
3.3 V
3.3 V
3.3 V
—
4096 in 64 ms
Yes
4096 in 128 ms
—
2048 in 32 ms
Yes
2048 in 128 ms
—
4096 in 64 ms
Yes
4096 in 128 ms
—
2048 in 32 ms
Yes
2048 in 128 ms
These devices feature maximum RAS access times of 60 ns, 70 ns, and 80 ns. All addresses and data-in lines
are latched on-chip to simplify system design. Data out is unlatched to allow greater system flexibility.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
EPIC is a trademark of Texas Instruments Incorporated.
UNLESS OTHERWISE NOTED this document contains PRODUCTION
DATA information current as of publication date. Products conform to
specifications per the terms of Texas Instruments standard warranty.
Production processing does not necessarily include testing of all
parameters.
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Copyright © 1995, Texas Instruments Incorporated
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