TMS416160 Datasheet, PDF (1/28 Pages) Texas Instruments – 1048576-WORD BY 16-BIT HIGH-SPEED DRAMS

TMS416160, TMS416160P, TMS418160, TMS418160P
TMS426160, TMS426160P, TMS428160, TMS428160P
1048576-WORD BY 16-BIT HIGH-SPEED DRAMS
SMKS160C – MAY 1995 – REVISED NOVEMBER 1995
D Organization . . . 1 048576 × 16
D Single Power Supply (5 V or 3.3 V)
D Performance Ranges:
ACCESS ACCESS ACCESS
TIME TIME TIME
READ OR
WRITE
DGE PACKAGE
( TOP VIEW )
V_CC 1
DQ0 2
50 V_SS
49 DQ15
DZ PACKAGE
( TOP VIEW )
V_CC 1
DQ0 2
42 V_SS
41 DQ15
tRAC
MAX
tCAC
MAX
tAA
MAX
CYCLE
MIN
’4xx160/P-60 60 ns 15 ns 30 ns
110 ns
’4xx160/P-70 70 ns 18 ns 35 ns
130 ns
’4xx160/P-80 80 ns 20 ns 40 ns
150 ns
D Enhanced Page-Mode Operation With
CAS-Before-RAS ( CBR) Refresh
D Long Refresh Period and Self-Refresh
Option ( TMS4xx160P)
D 3-State Unlatched Output
D Low Power Dissipation
D High-Reliability Plastic 42-Lead (DZ Suffix)
400-Mil-Wide Surface-Mount (SOJ) Package
and 44/50-Lead (DGE Suffix) Surface-Mount
Thin Small-Outline Package ( TSOP)
D Operating Free-Air Temperature Range
0°C to 70°C
D Fabricated Using the Texas Instruments
Enhanced Performance Implanted CMOS
(EPIC™) Technology
DQ1 3
DQ2 4
DQ3 5
V_CC 6
DQ4 7
DQ5 8
DQ6 9
DQ7 10
NC 11
NC 15
NC 16
W 17
RAS 18
A11^† 19
A10^† 20
A0 21
A1 22
48 DQ14
47 DQ13
46 DQ12
45 V_SS
44 DQ11
43 DQ10
42 DQ9
41 DQ8
40 NC
36 NC
35 LCAS
34 UCAS
33 OE
32 A9
31 A8
30 A7
29 A6
DQ1 3
DQ2 4
DQ3 5
V_CC 6
DQ4 7
DQ5 8
DQ6 9
DQ7 10
NC 11
NC 12
W 13
RAS 14
A11^† 15
A10^† 16
A0 17
A1 18
A2 19
A3 20
V_CC 21
40 DQ14
39 DQ13
38 DQ12
37 V_SS
36 DQ11
35 DQ10
34 DQ9
33 DQ8
32 NC
31 LCAS
30 UCAS
29 OE
28 A9
27 A8
26 A7
25 A6
24 A5
23 A4
22 V_SS
AVAILABLE OPTIONS
A2 23 28 A5
DEVICE
POWER
SUPPLY
SELF
REFRESH,
BATTERY
REFRESH
CYCLES
A3 24
V_CC 25
27 A4
26 V_SS
TMS416160
BACKUP
5V
—
4096 in 64 ms
† _{A10 and A11 are NC for TMS4x8160 and TMS4x8160P.}
TMS416160P
5V
Yes
4096 in 128 ms
TMS418160
TMS418160P
TMS426160
TMS426160P
TMS428160
TMS428160P
5V
5V
3.3 V
3.3 V
3.3 V
3.3 V
—
1024 in 16 ms
Yes
1024 in 128 ms
—
4096 in 64 ms
Yes
4096 in 128 ms
—
1024 in 16 ms
Yes
1024 in 128 ms
PIN NOMENCLATURE
A0 – A11
DQ0 – DQ15
LCAS
UCAS
NC
Address Inputs
Data In / Data Out
Lower Column-Address Strobe
Upper Column-Address Strobe
No Internal Connection
description
The TMS4xx160 series is a set of high-speed,
16 777 216-bit dynamic random-access memo-
ries (DRAMs) organized as 1 048 576 words of 16
OE
RAS
VCC
VSS
W
Output Enable
Row-Address Strobe
5-V or 3.3-V Supply‡
Ground
Write Enable
bits each. The TMS4xx160P series is a similar
‡ _{See Available Options Table.}
set of high-speed, low-power, self-refresh,
16 777 216-bit DRAMs organized as 1 048 576 words of 16 bits each. Both sets employ state-of-the-art
enhanced performance implanted CMOS (EPIC™) technology for high performance, reliability, and low power
at low cost.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
EPIC is a trademark of Texas Instruments Incorporated.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright © 1995, Texas Instruments Incorporated
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