TM124BBJ32F Datasheet, PDF (1/10 Pages) Texas Instruments – 32-BIT DYNAMIC RAM MODULE

TM124BBJ32F, TM124BBJ32U 1048576 BY 32-BIT DYNAMIC RAM MODULE
TM248CBJ32F, TM248CBJ32U 2097152 BY 32-BIT DYNAMIC RAM MODULE
• Organization
TM124BBJ32F . . . 1 048 576 × 32
TM248CBJ32F . . . 2 097 152 × 32
• Single 5-V Power Supply (±10% Tolerance)
• 72-Pin Single In-Line Memory Module
(SIMM) for Use With Socket
• TM124BBJ32F – Utilizes Two 16-Megabit
DRAMs in Plastic Small-Outline J-Lead
(SOJ) Packages
• TM248CBJ32F – Utilizes Four 16-Megabit
DRAMs in Plastic Small-Outline J-Lead
(SOJ) Packages
• Long Refresh Period
16 ms (1 024 Cycles)
• All Inputs, Outputs, Clocks Fully
TTL-Compatible
• 3-State Output
• Common CAS Control for Eight Common
Data-In and Data-Out Lines in Four Blocks
• Enhanced Page-Mode Operation With
CAS-Before-RAS ( CBR), RAS-Only, and
Hidden Refresh
SMMS661 – JANUARY 1996
• Presence Detect
• Performance Ranges:
ACCESS
TIME
tRAC
(MAX)
ACCESS ACCESS READ
TIME TIME OR
tAA
tCAC WRITE
CYCLE
(MAX) (MAX) (MIN)
’124BBJ32F-60 60 ns
30 ns 15 ns 110 ns
’124BBJ32F-70 70 ns
35 ns 18 ns 130 ns
’124BBJ32F-80 80 ns
40 ns 20 ns 150 ns
’248CBJ32F-60 60 ns
30 ns 15 ns 110 ns
’248CBJ32F-70 70 ns
35 ns 18 ns 130 ns
’248CBJ32F-80 80 ns
40 ns 20 ns 150 ns
• Low Power Dissipation
• Operating Free-Air Temperature Range
0°C to 70°C
• Gold-Tabbed Versions Available:^†
TM124BBJ32F
TM248CBJ32F
• Tin-Lead (Solder) Tabbed Versions
Available:
TM124BBJ32U
TM248CBJ32U
description
TM124BBJ32F
The TM124BBJ32F is a 4-MByte dynamic random-access memory (DRAM) organized as four times
1 048 576 × 8 in a 72-pin SIMM. The SIMM is composed of two TMS418160DZ, 1 048 576 × 16-bit DRAMs, each
in a 42-lead plastic SOJ package mounted on a substrate with decoupling capacitors. The TMS418160DZ is
described in the TMS418160 data sheet. The TM124BBJ32F SIMM is available in the single-sided BJ-leadless
module for use with sockets.
TM248CBJ32F
The TM248CBJ32F is an 8-MByte DRAM organized as four times 2 097 152 × 8 in a 72-pin SIMM. The SIMM
is composed of four TMS418160DZ, 1 048 576 × 16-bit DRAMs, each in a 42-lead plastic SOJ package mounted
on a substrate with decoupling capacitors. The TMS418160DZ is described in the TMS418160 data sheet. The
TM248CBJ32F SIMM is available in the double-sided BJ-leadless module for use with sockets.
operation
The TM124BBJ32F operates as two TMS418160DZs connected as shown in the functional block diagram and
Table 1. The TM248CBJ32F operates as four TMS418160DZs connected as shown in the functional block
diagram and Table 1. The common I / O feature dictates the use of early-write cycles to prevent contention on
D and Q.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
† _{Part numbers in this data sheet are for the gold-tabbed version; the information applies to both gold-tabbed and solder-tabbed versions.}
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright © 1996, Texas Instruments Incorporated
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