TC241 Datasheet, PDF (1/18 Pages) Texas Instruments – 780- × 488-pixel ccd image sensor

TC241
780- × 488-PIXEL CCD IMAGE SENSOR
• High-Resolution, Solid-State Image Sensor
for NTSC B/W TV Applications
• 11-mm Image-Area Diagonal, Compatible
With 2/3” Vidicon Optics
• 754 (H) x 244 (V) Active Elements in
Image-Sensing Area
• Low Dark Current
• Electron-Hole Recombination Antiblooming
• Dynamic Range . . . More Than 60 dB
• High Sensitivity
• High Photoresponse Uniformity
• High Blue Response
• Single-Phase Clocking
• Solid-State Reliability With No Image
Burn-in, Residual Imaging, Image
Distortion, Image Lag, or Microphonics
description
SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991
DUAL-IN-LINE PACKAGE
(TOP VIEW)
SUB ¹
IAG ²
SAG ³
TDB ⁴
ADB ⁵
OUT3 ⁶
OUT2 ⁷
OUT1 ⁸
AMP GND ⁹
GND ¹⁰
SUB ¹¹
22 _SUB
21 _ABG
20 _IAG
19 _SAG
18 _SRG3
17 _SRG2
16 _SRG1
15 _TRG
14 _IDB
13 _CDB
12 _SUB
The TC241 is a frame-transfer charge-coupled device (CCD) image sensor designed for use in single-chip B/W
NTSC TV applications. The device is intended to replace a 2/3-inch vidicon tube in applications requiring small
size, high reliability, and low cost.
The image-sensing area of the TC241 is configured into 244 lines with 780 elements in each line. Twenty-four
elements are provided in each line for dark reference. The blooming-protection feature of the sensor is based
on recombining excess charge with charge of opposite polarity in the substrate. This antiblooming is activated
by supplying clocking pulses to the antiblooming gate, which is an integral part of each image- sensing element.
The sensor is designed to operate in an interlace mode, electronically displacing the image-sensing elements
by one-half of a vertical line during the charge integration period in alternate fields, effectively increasing the
vertical resolution and minimizing aliasing. The device can also be run as a 754 (H) by 244 (V) noninterlaced
sensor with significant reduction in the dark signal.
A gated floating-diffusion detection structure with an automatic reset and voltage reference incorporated on-chip
converts charge to signal voltage. A low-noise, two-stage, source-follower amplifier buffers the output and
provides high output-drive capability.
The TC241 is built using TI-proprietary virtual-phase technology, which provides devices with high blue
response, low dark current, high photoresponse uniformity, and single-phase clocking.
The TC241 is characterized for operation from –10°C to 45°C.
This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together
or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to SUB. Under no
circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUTn to ADB during operation to prevent
damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is
allowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling
Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
• POST OFFICE BOX 655303 DALLAS, TEXAS 75265
Copyright © 1991, Texas Instruments Incorporated
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