F55NF06 Datasheet, PDF (5/6 Pages) Thinki Semiconductor Co., Ltd. – N-CHANNEL POWER MOSFET TRANSISTOR

55NF06
®
„ TYPICAL CHARACTERISTICS
On-Resistance Variation vs.
Drain Current and Gate Voltage
2.5
2.0



On State Current vs.
Allowable Case Temperature
10²
1.5
1.0
V_GS=10V
0.5
V_GS=20V
0.0
0 20 40 60 80 100 120140160180 200
Drain Current, I_D (A)


150°C
10¹
25°C
10⁰
0.2 0.4
*Note:
1. V_GS=0V
2. 250μs Test
0.6 0.8 1.0 1.2 1.4 1.6
Source-Drain Voltage, V_SD (V)

Rev.02
© 2006 Thinki Semiconductor Co.,Ltd.

Page 5/6
http://www.thinkisemi.com/