F55NF06 Datasheet, PDF (1/6 Pages) Thinki Semiconductor Co., Ltd. – N-CHANNEL POWER MOSFET TRANSISTOR

55NF06
®
55NF06
Pb
Pb Free Plating Product
N-CHANNEL POWER MOSFET TRANSISTOR
50 AMPERE 60 VOLT
N-CHANNEL POWER MOSFET
„ DESCRIPTION
ThinkiSemi 50N06 is three-terminal silicon device with current
conduction capability of about 50A, fast switching speed. Low
on-state resistance, breakdown voltage rating of 60V, and max
threshold voltages of 4 volt.
It is mainly suitable electronic ballast, and low power switching
mode power appliances.
„ FEATURES
* R_DS(ON) = 23mȍ@V_GS = 10 V
* Ultra low gate charge ( typical 30 nC )
* Low reverse transfer capacitance ( C_RSS = typical 80 pF )
* Fast switching capability
* 100% avalanche energy specified
* Improved dv/dt capability
„ SYMBOL
U55NF06 TO-251/IPAK
P55NF06 TO-220
F55NF06 TO-220F
D55NF06 TO-252/DPAK
„ APPLICATION
Auotmobile Convert System
Networking DC-DC Power System
Power Supply etc..
12 ₃
TO-251/IPAK
123
TO-220/TO-220F
1 _{2 3 TO-252/DPAK}
1.Gate
2.Drain
„ ABSOLUTE MAXIMUM RATINGS
3.Source
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V_DSS
60
V
Gate-Source Voltage
V_GSS
±20
V
Continuous Drain Current
T_C = 25°C
T_C = 100°C
I_D
50
A
35
A
Pulsed Drain Current (Note 2)
I_DM
200
A
Avalanche Energy
Single Pulsed (Note 3)
E_AS
Repetitive (Note 2)
E_AR
480
mJ
13
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
7
V/ns
TO-220
120
W
Power Dissipation (T_C=25°C)
TO-251
P_D
90
W
TO-252
136
W
Junction Temperature
T_J
+150
°C
Operation and Storage Temperature
T_STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Rev.02
2. Repetitive Rating: Pulse width limited by T_J
3. L=0.38mH, I_AS=50A, V_DD=25V, R_G=20ȍ, Starting T_J=25°C
4. I_SD”50A, di/dt”300A/ȝs, V_DD”BV_DSS, Starting T_J=25°C
Page 1/6
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/