RHRP30120U Datasheet, PDF (2/3 Pages) Thinki Semiconductor Co., Ltd. – 30.0 Ampere SwitchMode Ultrafast Recovery Epitaxial Diode

RHRP30120U
®
60
50 _{TJ =125°C}
40
30
20
TJ =25°C
10
0
0 1.0 2.0 3.0 4.0 5.0 6.0
VF（V）
Fig1. Forward Voltage Drop vs Forward Current
25
VR=600V
TJ =125°C
20
IF=60A
15
10
IF=30A
IF=15A
5
0
0
200 400 600 800 1000
diF/dt（A/μs）
Fig3. Reverse Recovery Current vs diF/dt
1.4
1.2
1
0.8
0.6
0.4 ^IRRM
0.2 trr
Qrr
0
0 25 50 75 100 125 150
TJ (°C)
Fig5. Dynamic Parameters vs Junction Temperature
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
400
320
IF=60A
VR=600V
TJ =125°C
240
160 _IF=30A
IF=15A
80
0
0
200 400 600 800 1000
diF/dt（A/μs）
Fig2. Reverse Recovery Time vs diF/dt
2500
2000
VR=600V
TJ =125°C
IF=60A
1500
1000
IF=30A
IF=15A
500
0
0
200 400 600 800 1000
diF/dt（A/μs）
Fig4. Reverse Recovery Charge vs diF/dt
10
1
10^-1
10^-2
Duty
0.5
0.2
0.1
0.05
Single Pulse
10^-3_10-4
10^-3
10^-2
10^-1
1
Rectangular Pulse Duration (seconds)
Fig6. Transient Thermal Impedance
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