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RHRP30120U Datasheet, PDF (1/3 Pages) Thinki Semiconductor Co., Ltd. – 30.0 Ampere SwitchMode Ultrafast Recovery Epitaxial Diode
RHRP30120U
®
RHRP30120U
Pb
Pb Free Plating Product
30.0 Ampere SwitchMode Ultrafast Recovery Epitaxial Diode
APPLICATION
· Freewheeling, Snubber, Clamp
· Inversion Welder
· PFC
· Plating Power Supply
· Ultrasonic Cleaner and Welder
· Converter & Chopper
· UPS
TO-220AC
Cathode(Bottom Side Metal Heatsink)
PRODUCT FEATURE
· Ultrafast Recovery Time
· Soft Recovery Characteristics
· Low Recovery Loss
· Low Forward Voltage
· High Surge Current Capability
· Low Leakage Current
Internal Configuration
Base Backside
Anode
Cathode
GENERAL DESCRIPTION
RHRP30120U using lastest FRED FAB process(planar passivation pellet) with ultrafast and soft recovery characteristics.
ABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Values
Unit
VR
Maximum D.C. Reverse Voltage
1200
V
V RRM
Maximum Repetitive Reverse Voltage
1200
V
I F(AV)
Average Forward Current
TC=110°C
30
A
IF(RMS) RMS Forward Current
TC=110°C
45
A
I FSM
Non-Repetitive Surge Forward Current TJ=45°C, t=10ms, 50Hz, Sine
300
A
PD
Power Dissipation
105
W
TJ
Junction Temperature
-40 to +150
°C
T STG
Storage Temperature Range
-40 to +150
°C
Torque Module-to-Sink
Recommended(M3)
1.1
N·m
R θJC
Thermal Resistance
Junction-to-Case
Weight
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
I RM
Reverse Leakage Current
VR=1200V
VR=1200V, TJ=125°C
1.2
°C /W
2.2
g
TC=25°C unless otherwise specified
Min. Typ. Max. Unit
--
-- 100 µA
--
-- 500 µA
VF
Forward Voltage
I F =30A
IF=30A, TJ=125°C
-- 2.6 3.5
V
-- 2.0 --
V
t rr
Reverse Recovery Time
IF=1A, VR=30V, diF/dt=-200A/μs --
27
--
ns
t rr
Reverse Recovery Time
VR=600V, IF=30A
I RRM
Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=25°C
--
55
--
ns
-- 3.5 --
A
t rr
Reverse Recovery Time
VR=600V, IF=30A
I RRM
Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=125°C
-- 290 --
ns
-- 8.5 --
A
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
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