MUR880E Datasheet, PDF (2/2 Pages) Thinki Semiconductor Co., Ltd. – 8 Ampere,800 Volt Epitaxial Type Ultra Fast Recovery Rectifier Diode

MUR880E
®
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
12
Resistive or Inductive Load
10
8
6
4
2
0
0
25
50
75
100 125
150
Case Ambient Temperature (°C)
Figure 1. Forward Current Derating Curve
150
125
T_L = 75 °C
8.3 ms Single Half Sine-Wave
100
75
50
25
0
1
10
100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
100
T_J = 150 °C
T_J = 25 °C
10
1
0.1
0.4
T_J = 100 °C
T_J = 125 °C
Pulse Width = 300 μs
1 % Duty Cycle
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
1000
100
10
T_J = 150 °C
T_J = 125 °C
T_J = 100 °C
T_J = 25 °C
5
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics
100
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mVp-p
10
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
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