MUR880E Datasheet, PDF (1/2 Pages) Thinki Semiconductor Co., Ltd. – 8 Ampere,800 Volt Epitaxial Type Ultra Fast Recovery Rectifier Diode

MUR880E
®
MUR880E
Pb
Pb Free Plating Product
8 Ampere,800 Volt Epitaxial Type Ultra Fast Recovery Rectifier Diode
Features
‘ Fast switching for high efficiency
‘ Low forward voltage drop
‘ High current capability
‘ Low reverse leakage current
‘ High surge current capability
Mechanical Data
‘ Case: TO-220C-2P Heatsink
‘ Epoxy: UL 94V-0 rate flame retardant
‘ Terminals: Solderable per MIL-STD-202
method 208
‘ Polarity:Color band denotes cathode
‘ Mounting position: Any
‘ Weight: 2.05 gram approximately
TO-220AC
2
Unit: mm
Maximum Ratings and Electrical Characteristics
Rating at 25 к ambient temperature unless otherwise specified.
Parameter
Symbol
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
V_RRM
V_RMS
V_DC
I_F(AV)
I_FSM
Maximum Instantaneous Forward Voltage (Note 1)
@8A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@ T_A=25 к
@ T_A=125 к
Maximum Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
V_F
I_R
Trr
Cj
R_θJC
T_J
T_STG
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
MUR880E
800
560
800
8
100
1.8
5
100
40
50
1.5
- 55 to + 150
- 55 to + 150
Units
V
V
V
A
A
V
uA
nS
pF
к/W
к
к
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/