MUR6030PT Datasheet, PDF (2/3 Pages) Thinki Semiconductor Co., Ltd. – 60.0 Ampere,300 Volt Common Cathode Fast Recovery Epitaxial Diode

MUR6030PT
®
60
50
40
T_J =125°C
30
20
T_J =25°C
10
0
0 0.3 0.6 0.9 1.2 1.5 1.8
V_F（V）
Fig1. Forward Voltage Drop vs Forward Current
24
V_R=150V
T_J =125°C
20
16
I_F=60A
12
I_F=30A
I_F=15A
8
4
0
0
200 400 600 800 1000
di_F/dt（A/μs）
Fig3. Reverse Recovery Current vs di_F/dt
1.2
1
0.8
0.6
t_rr
0.4 IRRM
0.2 ^Qrr
0
0 25 50 75 100 125 150
T_J (°C)
Fig5. Dynamic Parameters vs Junction Temperature
100
80
I_F=60A
V_R=150V
T_J =125°C
60
I_F=30A
40 ^IF=15A
20
0
0
200 400 600 800 1000
di_F/dt（A/μs）
Fig2. Reverse Recovery Time vs di_F/dt
600
V_R=150V
T_J =125°C
500
400
300
I_F=60A
I_F=30A
I_F=15A
200
100
0
0
200 400 600 800 1000
di_F/dt（A/μs）
Fig4. Reverse Recovery Charge vs di_F/dt
10
1
10^-1
10^-2
Duty
0.5
0.2
0.1
0.05
Single Pulse
10^-3_10-4
10^-3
10^-2
10^-1
1
Rectangular Pulse Duration (seconds)
Fig6. Transient Thermal Impedance
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
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