MUR6030PT Datasheet, PDF (1/3 Pages) Thinki Semiconductor Co., Ltd. – 60.0 Ampere,300 Volt Common Cathode Fast Recovery Epitaxial Diode

MUR6030PT
®
MUR6030PT
Pb
Pb Free Plating Product
60.0 Ampere,300 Volt Common Cathode Fast Recovery Epitaxial Diode
APPLICATION
· Freewheeling, Snubber, Clamp
· Inversion Welder
· PFC
· Plating Power Supply
· Ultrasonic Cleaner and Welder
· Converter & Chopper
· UPS
TO-247AD/TO-3P
Cathode(Bottom Side Metal Heatsink)
PRODUCT FEATURE
· Ultrafast Recovery Time
· Soft Recovery Characteristics
· Low Recovery Loss
· Low Forward Voltage
· High Surge Current Capability
· Low Leakage Current
Internal Configuration
Base Backside
—
Anode
Cathode
Anode
GENERAL DESCRIPTION
MUR6030PT using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
ABSOLUTE MAXIMUM RATINGS
T_C=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Values
Unit
V_R
Maximum D.C. Reverse Voltage
300
V
V_RRM
Maximum Repetitive Reverse Voltage
300
V
I_F(AV)
Average Forward Current
T_C=110°C, Per Diode
T_C=110°C, Per Package
30
A
60
A
I_F(RMS) RMS Forward Current
T_C=110°C, Per Diode
42
A
I_FSM
Non-Repetitive Surge Forward Current ^TJ^{=45°C, t=10ms, 50Hz, Sine}
480
A
P_D
Power Dissipation
156
W
T_J
Junction Temperature
-55to +150
°C
T_STG
Torque
Storage Temperature Range
Module-to-Sink
Recommended（M3）
-55 to +150
°C
1.1
N·m
R_th(J-C) Thermal Resistance
Junction-to-Case, Per Diode
0.8
°C /W
Weight
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
I_RM
Reverse Leakage Current
V_R=300V
V_R=300V, T_J=125°C
6
g
T_C=25°C unless otherwise specified
Min. Typ. Max. Unit
--
--
10
µA
--
--
10 mA
V_F
Forward Voltage
t_rr
Reverse Recovery Time
I_F=30A
-- 1.25 1.8
V
I_F=30A, T_J=125°C
-- 1.12 --
V
I_F=1A, V_R=30V, di_F/dt=-200A/μs
--
22
--
ns
t_rr
Reverse Recovery Time
V_R=150V, I_F=30A
I_RRM
Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=25°C
--
35
--
ns
-- 2.5 --
A
t_rr
Reverse Recovery Time
V_R=150V, I_F=30A
I_RRM
Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=125°C
--
70
--
ns
-- 6.8 --
A
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/3
http://www.thinkisemi.com/