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| 2SD1163A Datasheet, PDF (2/2 Pages) Thinki Semiconductor Co., Ltd. – NPN Silicon Epitaxial Power Transistor | |||
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2SD1163/2SD1163A
®
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
2SD1163
2SD1163A
IC=10mA ;RBE=
V(BR)EBO Emitter-base breakdown voltage
IE=10mA ;IC=0
VCEsat
Collector-emitter
saturation voltage
2SD1163
2SD1163A
IC=5A, IB=0.5A
VBEsat Base-emitter saturation voltage
IC=5A, IB=0.5A
ICBO
Collector
cut-offcurrent
2SD1163 VCB=300V;IE=0
2SD1163A VCB=350V;IE=0
hFE
DC current gain
IC=5A ; VCE=5V
Switching times
tf
Fall time
ICM=3.5A;IB1 =0.45A
MIN TYP MAX UNIT
120
V
150
6
V
2.0
V
1.0
1.2
V
5
mA
5
mA
25
0.5
s
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/2
http://www.thinkisemi.com/
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