2SD1163A Datasheet, PDF (1/2 Pages) Thinki Semiconductor Co., Ltd. – NPN Silicon Epitaxial Power Transistor

2SD1163/2SD1163A
®
2SD1163/2SD1163A
Pb
Pb Free Plating Product
NPN Silicon Epitaxial Power Transistor
FEATURES:
* Medium Power Linear Switching Applications
* ^{Low collector saturation voltage}
TV horizontal deflection output
9.90±0.20
φ3.60^±0.20
4.50±0.20
1.30±0.20
COLLECTOR
2
BASE
1
3
EMITTER
1. BASE
2. COLLECTOR
3. EMITTER
1.27±0.20
1.52±0.20
2.40±0.20
1 ²³
TO-220C
2.54typ
2.54typ
Package Dimension
0.80±0.20
0.50^±0.20
Dimensions in Millimeters
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
2SD1163
2SD1163A
Open emitter
V_CEO
Collector-emitter voltage
2SD1163
2SD1163A
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_CM
Collector current-peak
I_C(surge)
Collector current-surge
P_C
Collector power dissipation
T_C=25
T_j
Junction temperature
T_stg
Storage temperature
VALUE
300
350
120
150
6
7
10
20
40
150
-55~150
UNIT
V
V
V
A
A
A
W
© 2006 Thinki Semiconductor Co.,Ltd.
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