KO3415 Datasheet, PDF (4/4 Pages) Tiger Electronic Co.,Ltd – P-Channel Enhancement Mode Field Effect Transistor

SMD Type
MOSFIECT
KO3415
5
V_DS=-10V
4
I_D=-4A
3
2
1
0
0
5
10
15
20
-Q_g (nC)
Figure 7: Gate-Charge Characteristics
2400
2000
C_iss
1600
1200
800
C_oss
400
C_rss
0
0
5
10
15
20
-V_DS (Volts)
Figure 8: Capacitance Characteristics
100.0
T_J(Max)=150°C
T_A=25°C
R_DS(ON)
10.0 _limited
10µs
100µs
1ms
1.0
1s
10ms
10s
0.1s
DC
0.1
0.1
1
10
100
-V_DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
40
T_J(Max)=150°C
T_A=25°C
30
20
10
0
0.001 0.01 0.1
1
10
100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=T_on/T
T_J,PK=T_A+P_DM.Z_θJA.R_θJA
R_θJA=90°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P_D
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
T_on
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
1000
4