KO3415 Datasheet, PDF (1/4 Pages) Tiger Electronic Co.,Ltd – P-Channel Enhancement Mode Field Effect Transistor

TIGER ELECTRONIC CO.,LTD
SMD Type
MOSFIECT
P-Channel Enhancement Mode
Field Effect Transistor
KO3415
Features
VDS (V) = -20V
ID = -4 A
RDS(ON) 43m (VGS = -4.5V)
RDS(ON) 54m (VGS = -2.5V)
RDS(ON) 73m (VGS = -1.8V)
SOT-23-3
2.9+0.2
-0.2
0.4+0.1
-0.05
3
1
2
0.95+0.1
-0.1
1.9^+0.2
-0.2
Unit: mm
0.1+0.05
-0.01
1. Gate
2. Source
3. Drain
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
-20
Gate-Source Voltage
VGS
8
Continuous Drain TA=25
Current *1
TA=70
-4.0
ID
-3.5
Pulsed Drain Current *2
IDM
-30
Power Dissipation *1 TA=25
TA=70
1.4
PD
0.9
Thermal Resistance.Junction-to-Ambient
R JA
125
Thermal Resistance.Junction-to-Case
R JC
60
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
*1The value of R JA is measured with the device mounted on 1in ² FR-4 board with 2oz.
Copper, in a still air environment with TA =25
*2 Repetitive rating, pulse width limited by junction temperature.
Unit
V
V
A
W
/W
/W
1