SIA527DJ Datasheet, PDF (9/14 Pages) Vishay Telefunken – N- and P-Channel 12-V (D-S) MOSFET

P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.15
SiA527DJ
Vishay Siliconix
10
T_J = 150 °C
T_J = 25 °C
1
0.12
I_D = 5.5 A, T_J = 125 °C
0.09
I_D = 1.5 A,
T_J = 25 °C
0.06
I_D = 5.5 A, T_J = 25 °C
0.03
I_D = 1.5 A, T_J = 125 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Soure-Drain Diode Forward Voltage
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.9
20
0.8
15
0.7
I_D = 250 μA
0.6
10
0.5
5
0.4
0.3
- 50 - 25
0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
Threshold Voltage
0
0.001 0.01
0.1
1
10
Time (s)
100 1000
Single Pulse Power, Junction-to-Ambient
100
Limited by R_DS(on)^*
10
100 μs
1 ms
1
10 ms
100 ms
1s
0.1
10 s
DC
T_A = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 64162
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S13-1669-Rev. A, 29-Jul-13
9
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000