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SIA527DJ Datasheet, PDF (8/14 Pages) Vishay Telefunken – N- and P-Channel 12-V (D-S) MOSFET
SiA527DJ
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
15
10
VGS = 5 V thru 2.5 V
12
8
2V
9
6
6
1.5 V
3
1V
0
0
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.16
0.14
VGS = 1.8 V
0.12
0.10
0.08
0.06
0.04
VGS = 2.5 V
VGS = 4.5 V
0.02
0
3
6
9
12
15
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
8
ID = 5.6 A
6
4
VDS = 3 V
2
VDS = 9.6 V
VDS = 6 V
0
0
3
6
9
12
15
18
Qg - Total Gate Charge
Gate Charge
4
2
0
0
1500
TC = 25 °C
TC = 125 °C
TC = - 55 °C
0.5
1.0
1.5
2.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
1200
900
Ciss
600
300
0
0
Coss
Crss
3
6
9
12
VDS - Drain-to-Source Voltage (V)
Capacitance
1.4
1.3
VGS = 4.5 V, 2.5 V
ID = 4.3 A
1.2
1.1
VGS = 1.8 V
ID = 1.5 A
1.0
0.9
0.8
0.7
- 50 - 25
0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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For technical questions, contact:: pmostechsupport@vishay.com
Document Number: 64162
8
S13-1669-Rev. A, 29-Jul-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000