SI6562CDQ Datasheet, PDF (9/17 Pages) Vishay Siliconix – N- and P-Channel 20-V (D-S) MOSFETs

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P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.10
0.08
Si6562CDQ
Vishay Siliconix
I_D = 5.1 A
T_J = 150 °C
10
T_J = 25 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
1.1
1.0
I_D = 250 µA
0.9
0.8
0.7
0.6
0.5
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
* Limited by R_DS(on)
0.06
0.04
T_J = 125 °C
0.02
0.00
0
20
T_J = 25 °C
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source
16
12
8
4
0
0.001 0.01
0.1
1
10
100
Time (s)
Single Pulse Power
1000
10
100 µs
1 ms
1
10 ms
0.1
T_A = 25 °C
Single Pulse
BVDSS Limited
100 ms
1 s, 10 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 68954
S-82575-Rev. A, 27-Oct-08
www.vishay.com
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