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SI6562CDQ Datasheet, PDF (2/17 Pages) Vishay Siliconix – N- and P-Channel 20-V (D-S) MOSFETs
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Si6562CDQ
Vishay Siliconix
New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = - 250 µA
VDS Temperature Coefficient
ΔVDS/TJ
ID = 250 µA
ID = - 250 µA
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
ID = 250 µA
ID = - 250 µA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
IDSS
ID(on)
RDS(on)
gfs
VDS = 20 V, VGS = 0 V
VDS = - 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55 °C
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 4.5 V
VDS ≤ - 5 V, VGS = - 4.5 V
VGS = 4.5 V, ID = 5.7 A
VGS = - 4.5 V, ID = - 5.1 A
VGS = 2.5 V, ID = 4.4 A
VGS = - 2.5 V, ID = - 4.2 A
VDS = 10 V, ID = 5.7 A
VDS = - 10 V, ID = - 5.1 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
N-Channel
VDS = 10 V, VGS = 0 V, f = 1 MHz
P-Channel
VDS = - 10 V, VGS = 0 V, f = 1 MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 10 V, VGS = 10 V, ID = 5.7 A
Qg
VDS = - 10 V, VGS = - 10 V, ID = - 5.1 A
N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 5.7 A
Qgs
P-Channel
Qgd
VDS = - 10 V, VGS = - 4.5 V, ID = - 5.1 A
Gate Resistance
Rg
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
f = 1 MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
20
- 20
0.6
- 0.6
30
- 30
Typ. Max. Unit
V
22
- 21
- 3.5
3.5
mV/°C
1.5
V
- 1.5
± 100
nA
± 100
1
-1
µA
10
- 10
A
0.018 0.022
0.024 0.030
Ω
0.029 0.036
0.036 0.045
17
S
22
850
1200
150
pF
260
70
45
15
23
34
51
6.7
11
17
30
nC
1.8
3
0.9
5.5
2
Ω
6
www.vishay.com
2
Document Number: 68954
S-82575-Rev. A, 27-Oct-08
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