SI4590DY Datasheet, PDF (9/15 Pages) Vishay Telefunken – N- and P-Channel 100 V (D-S) MOSFET

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P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, (unless otherwise noted)
100
0.5
10
T_J = 150 °C
I_D = 2 A
0.4
0.3
T_J = 25 °C
0.2
1
0.1
Si4590DY
Vishay Siliconix
T_J = 125 °C
T_J = 25 °C
0.1
0.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
2.2
0
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
2.0
40
1.8
30
1.6
I_D = 250 μA
20
1.4
10
1.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.001 0.01
0.1
1
10
Time (s)
100 1000
Single Pulse Power, Junction-to-Ambient
100
Limited by R_DS(on)*
10 I_D(on) Limited
1
0.1
0.01
T_A = 25 °C
I_DM Limited
100 μs
1 ms
10 ms
100 ms
1s
10 s
DC
0.001
0.1
BVDSS Limited
1
10
100
1000
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
S14-0146-Rev. A, 27-Jan-14
9
Document Number: 62937
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