SI4590DY Datasheet, PDF (8/15 Pages) Vishay Telefunken – N- and P-Channel 100 V (D-S) MOSFET

www.vishay.com
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
10
16
V_GS = 10 V thru 5 V
8
Si4590DY
Vishay Siliconix
12
V_GS = 4 V
8
4
V_GS = 3 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
6
T_C = 25 °C
4
T_C = 125 °C
2
T_C = - 55 °C
0
0.0
1.0
2.0
3.0
4.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.25
1800
0.20
0.15
0.10
V_GS = 4.5 V
V_GS = 10 V
0.05
0
0
4
8
12
16
20
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
1500
1200
C_iss
900
600
300
C_rss
C_oss
0
0
20
40
60
80
100
V_DS - Drain-to-Source Voltage (V)
Capacitance
10
2.2
8
I_D = 5 A
V_DS = 50 V
2.0
I_D = 2 A
1.8
V_GS = 10V
6
V_DS = 25 V
1.6
1.4
4
V_DS = 80 V
1.2
V_GS = 4.5 V
1.0
2
0.8
0
0
5
10
15
20
25
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
S14-0146-Rev. A, 27-Jan-14
8
Document Number: 62937
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000