SI4914BDY Datasheet, PDF (8/15 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4914BDY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
2.0
V_GS = 10 V thru 5 V
40
4V
30
20
1.6
1.2
T_J = 25 °C
0.8
10
0
0
0.040
0.034
3V
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.4
T_J = 125 °C
0
0
1.2
2.4
T_J = - 55 °C
3.6
4.8
6.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
1200
C_iss
960
0.028
0.022
0.016
V_GS = 4.5 V
V_GS = 10 V
0.010
0
10
20
30
40
50
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 8 A
8
V_DS = 10 V
V_DS = 15 V
6
V_DS = 20 V
4
720
480
C_oss
240
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.7
I_D = 7.5 A
1.5
V_GS = 10 V
1.3
V_GS = 4.5 V
1.1
2
0.9
0
0
3.4
6.8
10.2
13.6
17.0
Q_g - Total Gate Charge (nC)
Gate Charge
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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8
Document Number: 69654
S09-2109-Rev. E, 12-Oct-09