SI4914BDY Datasheet, PDF (4/15 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4914BDY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
2.0
V_GS = 10 V thru 5 V
40
4V
30
20
1.6
1.2
T_C = 25 °C
0.8
10
0
0
0.05
0.04
3V
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.4
0
0
1000
800
T_C = 125 °C
T_J = - 55 °C
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
C_iss
0.03
0.02
0.01
V_GS = 4.5 V
V_GS = 10 V
0
0
10
20
30
40
50
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 8 A
8
V_DS = 10 V
V_DS = 15 V
6
V_DS = 20 V
4
600
400
200
C_oss
0 ^Crss
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.7
I_D = 7 A
1.5
V_GS = 10 V
1.3
V_GS = 4.5 V
1.1
2
0.9
0
0
3.2
6.4
9.6
12.8
16.0
Q_g - Total Gate Charge (nC)
Gate Charge
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
www.vishay.com
4
Document Number: 69654
S09-2109-Rev. E, 12-Oct-09