SI4564DY Datasheet, PDF (8/15 Pages) Vishay Siliconix – N- and P-Channel 40 V (D-S) MOSFET

Si4564DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
10
32
V_GS = 10 V thru 4 V
24
16
3V
8
8
6
T_C = 25 °C
4
2
T_C = 125 °C
T_C = - 55 °C
0
0
0.035
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0
0
1
2
3
4
5
3100
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.031
0.027
0.023
0.019
V_GS = 4.5 V
V_GS = 10 V
0.015
0
8
16
24
32
40
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 10 A
8
V_DS = 10 V
6
V_DS = 20 V
4
V_DS = 30 V
2
0
0
9
18
27
36
45
Q_g - Total Gate Charge
Gate Charge
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8
2480
C_iss
1860
1240
620
C_oss
C_rss
0
0
8
16
24
32
40
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 8 A
1.6
1.4
1.2
V_GS = 10 V
V_GS = 4.5 V
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 65922
S10-0455-Rev. B, 22-Feb-10