SI4564DY Datasheet, PDF (11/15 Pages) Vishay Siliconix – N- and P-Channel 40 V (D-S) MOSFET

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Si4564DY
Vishay Siliconix
Duty Cycle = 0.5
0.1
0.01
10^-4
1
0.2
0.1
0.05
0.02
10^-3
Single Pulse
10^-2
10^-1
1
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 110 °C/W
3. T_JM - T_A = P_DMZ_thJA ^(t)
4. Surface Mounted
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10^-4
10^-3
10^-2
10^-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65922.
Document Number: 65922
S10-0455-Rev. B, 22-Feb-10
www.vishay.com
11